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| April 1995 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features -0.18A, -60V. RDS(ON) = 5 @ VGS = -10V. Voltage controlled p-channel small signal switch. High density cell design for low RDS(ON) . High saturation current. ___________________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25C unless otherwise noted NDS0605 -60 -60 20 -0.18 -1 TA = 25C 0.36 2.9 -55 to 150 300 Units V V V A W mW/oC C C Derate above 25C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/16" from case for 10 seconds THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient 350 C/W (c) 1997 Fairchild Semiconductor Corporation NDS0605.SAM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -10 A VDS = -48 V, VGS = 0 V TJ = 125C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = -250 A TJ = 125C Static Drain-Source On-Resistance VGS = -10 V, ID = -0.5 A TJ = 125C VGS = -4.5 V, ID = -0.25 A TJ = 125C ID(on) gFS On-State Drain Current VGS = -10 V, VDS = -10 V VGS = -4.5 V, VDS = -10 V Forward Transconductance VDS = -10 V, ID = -0.2 A VDS = -25 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS -0.6 -0.25 0.07 S -1 -0.6 -60 -1 -500 100 -100 V A A nA nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage -3 -2.8 5 10 7.5 15 A V Ciss Coss Crss tD(on) tr tD(off) tf IS ISM VSD Input Capacitance Output Capacitance Reverse Transfer Capacitance 60 25 5 pF pF pF SWITCHING CHARACTERISTICS (Note 1) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time VDD = -30 V, ID = -0.2 A, VGS = -10 V, RGEN = 25 10 15 15 20 nS nS nS nS DRAIN-SOURCE DIODE CHARACTERISTICS Continuous Source Diode Current Maximum Pulsed Source Diode Current (Note 1) Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note 1) -0.18 -1 -1.5 TJ = 125C -1.3 A A V Note : 1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. NDS0605.SAM Typical Electrical Characteristics -1.4 VGS = -10V I D , DRAIN-SOURCE CURRENT (A) -1.2 -1 -0.8 -0.6 -9 -8 DRAIN-SOURCE ON-RESISTANCE 2.2 V GS = -4V 2 R DS(on) , NORMALIZED -7 -5 1.8 1.6 1.4 1.2 1 0.8 -6 -7 -8 -9 -10 -6 -5 -0.4 -0.2 0 0 -2 -4 -6 -8 V DS , DRAIN-SOURCE VOLTAGE (V) -10 -4 0 -0.2 -0.4 -0.6 -0.8 -1 I D , DRAIN CURRENT (A) -1.2 -1.4 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage and Drain Current 1.8 3 I DRAIN-SOURCE ON-RESISTANCE 1.6 R DS(ON) , NORMALIZED D= -0.5A DRAIN-SOURCE ON-RESISTANCE 2.5 TJ = 125C V GS -4.5V -10V 25 V GS = -10V R DS(on) , NORMALIZED 1.4 2 -55 125 1.2 1.5 1 25 1 0.8 -55 0.5 0 -0.2 -0.4 -0.6 -0.8 -1 I D , DRAIN CURRENT (A) -1.2 -1.4 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Drain Current and Temperature -1.2 GATE-SOURCE THRESHOLD VOLTAGE 1.1 V DS = -10V -1 I D, DRAIN CURRENT (A) TJ = -55C VDS = V GS I D = -1m A 25 125 Vth , NORMALIZED 1.05 -0.8 1 -0.6 0.95 -0.4 0.9 -0.2 0.85 0 0 -2 -4 -6 -8 -10 V GS , GATE TO SOURCE VOLTAGE (V) 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with Temperature NDS0605.SAM Typical Electrical Characteristics (continued) 1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) 1.5 I D = -10A -I , REVERSE DRAIN CURRENT (A) 1.1 VGS = 0V 1 BV DSS , NORMALIZED 1.05 0.5 TJ = 125C 25 1 0.3 -55 0.2 0.95 0.9 -50 S -25 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (C) 125 150 0.1 0.6 0.8 1 1.2 1.4 1.6 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.8 Figure 7. Breakdown Voltage Variation with Temperature Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 70 50 30 CAPACITANCE (pF) 20 VGS , GATE-SOURCE VOLTAGE (V) -10 C iss -8 V DS = -12V -24 -48 -6 C oss 10 -4 5 f = 1 MHz 3 2 0.1 0.2 C rss -2 V GS = 0V 0.5 1 2 5 10 20 -V DS , DRAIN TO SOURCE VOLTAGE (V) 30 60 I D = -0.5A 0 0 0.2 0.4 0.6 0.8 1 Q g , GATE CHARGE (nC) 1.2 1.4 1.6 Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 0.4 , TRANSCONDUCTANCE (SIEMENS) T J = -55C 0.3 25 125 0.2 0.1 g FS V DS = -10V 0 0 -0.2 -0.4 -0.6 -0.8 -1 I D , DRAIN CURRENT (A) -1.2 -1.4 Figure 11. Transconductance Variation with Drain Current and Temperature NDS0605.SAM Typical Electrical Characteristics (continued) 3 2 1 -I D , DRAIN CURRENT (A) 0.5 R ( DS ON im )L it 10 1m 10 ms 10 0m s 1s s 0u s 0.1 0.05 V GS = -10V SINGLE PULSE 0.01 0.005 1 2 5 10 10 s DC T A = 25C 20 30 60 80 - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 12. Maximum Safe Operating Area 1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) r(t), NORMALIZED EFFECTIVE R JA (t) = r(t) * R JA R JA = 350 C/W o 0.01 Single Pulse t1 t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 TJ - T A = P * R JA (t) Duty Cycle, D = t 1 /t2 100 300 Figure 13. Transient Thermal Response Curve. NDS0605.SAM |
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